Method for forming chip package with recessed interposer substrate

ABSTRACT

A method for forming a chip package is provided. The method includes disposing a chip over a redistribution structure. The redistribution structure includes a first insulating layer and a first wiring layer, and the first wiring layer is in the first insulating layer and electrically connected to the chip. The method includes bonding an interposer substrate to the redistribution structure through a conductive structure. The chip is between the interposer substrate and the redistribution structure. The interposer substrate has a recess adjacent to the redistribution structure. A first portion of the chip is in the recess. The interposer substrate includes a substrate and a conductive via structure, and the conductive via structure passes through the substrate and is electrically connected to the first wiring layer through the conductive structure.

PRIORITY CLAIM AND CROSS-REFERENCE

This Application claims the benefit of U.S. Provisional Application No.62/579,241, filed on Oct. 31, 2017, and entitled “Fan Out Package withinterposer”, the entirety of which is incorporated by reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating layers or dielectric layers,conductive layers, and semiconductor layers over a semiconductorsubstrate, and patterning the various material layers usingphotolithography processes and etching processes to form circuitcomponents and elements thereon.

Many integrated circuits are typically manufactured on a semiconductorwafer. The semiconductor wafer may be singulated into dies. The dies maybe packaged, and various technologies have been developed for packaging.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1J are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments.

FIG. 1D-1 is a top view of the chip package of FIG. 1D, in accordancewith some embodiments.

FIG. 2 is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIGS. 3A-3B are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments.

FIG. 4 is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIG. 5 is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIG. 6 is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIGS. 7A-7B are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments.

FIG. 8A is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIG. 8B is a top view of the interposer substrate of the chip package ofFIG. 8A, in accordance with some embodiments.

FIG. 9A is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIG. 9B is a top view of the interposer substrate of the chip package ofFIG. 9A, in accordance with some embodiments.

FIG. 10A is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIG. 10B is a top view of the interposer substrate of the chip packageof FIG. 10A, in accordance with some embodiments.

FIG. 11 is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIG. 12 is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIG. 13 is a cross-sectional view of a chip package, in accordance withsome embodiments.

FIGS. 14A-14D are cross-sectional views of various stages of a processfor forming a chip package, in accordance with some embodiments.

FIG. 15 is a cross-sectional view of a chip package, in accordance withsome embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matterprovided. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as “beneath,” “below,”“lower,” “above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. It should be understoodthat additional operations can be provided before, during, and after themethod, and some of the operations described can be replaced oreliminated for other embodiments of the method.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIGS. 1A-1J are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments. As shown inFIG. 1A, a carrier substrate 110 is provided, in accordance with someembodiments. The carrier substrate 110 is configured to providetemporary mechanical and structural support during subsequent processingsteps, in accordance with some embodiments. The carrier substrate 110includes glass, silicon, silicon oxide, aluminum oxide, metal, acombination thereof, and/or the like, in accordance with someembodiments. The carrier substrate 110 includes a metal frame, inaccordance with some embodiments.

As shown in FIG. 1A, a redistribution structure 120 is formed over thecarrier substrate 110, in accordance with some embodiments. Theformation of the redistribution structure 120 includes forming aninsulating layer 121 over the carrier substrate 110; forming conductivepads 122 over the insulating layer 121 and in through holes 121 a of theinsulating layer 121; forming an insulating layer 123 over theinsulating layer 121 and the conductive pads 122; forming a wiring layer124 over the insulating layer 123 and in through holes 123 a of theinsulating layer 123; forming an insulating layer 125 over theinsulating layer 123 and the wiring layer 124; forming a wiring layer126 over the insulating layer 125 and in through holes 125 a of theinsulating layer 125; forming an insulating layer 127 over theinsulating layer 125 and the wiring layer 126; and forming conductivepads 128 a and 128 b over the insulating layer 127 and in through holes127 a of the insulating layer 127. The conductive pad 128 a is widerthan the conductive pad 128 b, in accordance with some embodiments. Theconductive pads 128 a surround the conductive pads 128 b, in accordancewith some embodiments.

In some embodiments, the conductive pads 122 are in direct contact withthe carrier substrate 110. In some other embodiments (not shown), theconductive pads 122 are spaced apart from the carrier substrate 110. Thewiring layers 124 and 126 are electrically connected to each other, inaccordance with some embodiments. The conductive pads 122, 128 a, and128 b are electrically connected to the wiring layers 124 and 126, inaccordance with some embodiments.

The insulating layers 121, 123, 125, and 127 are made of an insulatingmaterial such as a polymer material (e.g., polybenzoxazole, polyimide,or a photosensitive material), nitride (e.g., silicon nitride), oxide(e.g., silicon oxide), silicon oxynitride, or the like, in accordancewith some embodiments. The wiring layers 124 and 126 and the conductivepads 122, 128 a and 128 b are made of a conductive material, such asmetal (e.g. copper, aluminum, or tungsten), in accordance with someembodiments.

As shown in FIG. 1B, dam structures 130 are formed over theredistribution structure 120, in accordance with some embodiments. Forthe sake of simplicity, FIGS. 1B-1E only show one of the dam structures130, in accordance with some embodiments. The dam structure 130 has anopening 132, in accordance with some embodiments. The dam structure 130is a ring structure, in accordance with some embodiments. The damstructure 130 continuously surrounds the conductive pads 128 b, inaccordance with some embodiments.

The dam structure 130 is made of a polymer material or a metal material,in accordance with some embodiments. The formation of the dam structure130 includes forming a dam material layer over the redistributionstructure 120; and performing a photolithography process and an etchingprocess on the dam material layer. If the dam structure 130 is made of aphotosensitive material, the formation of the dam structure 130 includesforming a dam material layer over the redistribution structure 120; andperforming a photolithography process. In some embodiments, the damstructures 130 are not formed.

As shown in FIG. 1C, chips 140 are bonded to the redistributionstructure 120 through conductive bumps 150, in accordance with someembodiments. For the sake of simplicity, FIGS. 1C-1E only show one ofthe chips 140, in accordance with some embodiments. The chip 140 is overor in the opening 132 of the dam structure 130, in accordance with someembodiments.

The chip 140 has a substrate 142 and conductive pads 144, in accordancewith some embodiments. The substrate 142 has a surface 142 a facing theredistribution structure 120, in accordance with some embodiments. Theconductive pads 144 are over the surface 142 a, in accordance with someembodiments.

In some embodiments, electronic elements (not shown) are formed on or inthe substrate 142. The electronic elements include active elements (e.g.transistors, diodes, or the like) and/or passive elements (e.g.resistors, capacitors, inductors, or the like). The conductive pads 144are electrically connected to the electronic elements, in accordancewith some embodiments.

In some embodiments, the substrate 142 is made of at least an elementarysemiconductor material including silicon or germanium in a singlecrystal, polycrystal, or amorphous structure. In some other embodiments,the substrate 142 is made of a compound semiconductor, such as siliconcarbide, gallium arsenide, gallium phosphide, indium phosphide, indiumarsenide, an alloy semiconductor, such as SiGe, or GaAsP, or acombination thereof.

The substrate 142 may also include multi-layer semiconductors,semiconductor on insulator (SOI) (such as silicon on insulator orgermanium on insulator), or a combination thereof. The conductive pads144 is made of a conductive material, such as metal (e.g., copper,aluminum, nickel, or combinations thereof), in accordance with someembodiments.

The conductive bumps 150 are between the conductive pads 128 b and 144to electrically connect the conductive pads 128 b to the conductive pads144, in accordance with some embodiments. The conductive bumps 150 arein the opening 132, in accordance with some embodiments. The conductivebumps 150 are made of a solder material, such as Sn and Ag or anothersuitable conductive material (e.g., gold), in accordance with someembodiments. The conductive bumps 150 are solder balls, in accordancewith some embodiments.

FIG. 1D-1 is a top view of the chip package of FIG. 1D, in accordancewith some embodiments. As shown in FIGS. 1D and 1D-1, an underfill layer160 is formed between the chip 140 and the redistribution structure 120,in accordance with some embodiments. The dam structure 130 continuouslysurrounds the entire underfill layer 160 to prevent the underfill layer160 from extending onto the conductive pads 128 a, in accordance withsome embodiments. The underfill layer 160 is made of an insulatingmaterial, such as a polymer material or a molding compound materialconsisting of epoxy and filler material, in accordance with someembodiments.

As shown in FIG. 1E, interposer substrates 170 are bonded to theredistribution structure 120 through conductive structures 180, inaccordance with some embodiments. For the sake of simplicity, FIG. 1Eonly shows one of the interposer substrates 170, in accordance with someembodiments. The chip 140 is between the interposer substrate 170 andthe redistribution structure 120, in accordance with some embodiments.The interposer substrate 170 has a recess R adjacent to theredistribution structure 120, in accordance with some embodiments. Therecess R faces the redistribution structure 120, in accordance with someembodiments. In some embodiments, a portion of the chip 140 is in therecess R.

The interposer substrate 170 includes a substrate 172, conductive pads173 a and 173 b, conductive via structures 174, insulating layers 175,176, and 178, and wiring layers (not shown), in accordance with someembodiments. The substrate 172 has two opposite surfaces 172 a and 172b, in accordance with some embodiments. The surface 172 a faces theredistribution structure 120, in accordance with some embodiments.

The substrate 172 is made of a fiber material, a polymer material, asemiconductor material, a glass material, a metal material, or anothersuitable material. The fiber material includes, for example, a glassfiber material. The semiconductor material includes, for example,silicon or germanium.

The conductive pads 173 a are over the surface 172 a, in accordance withsome embodiments. The conductive pads 173 b are over the surface 172 b,in accordance with some embodiments. The conductive via structures 174pass through the substrate 172, in accordance with some embodiments. Theconductive via structures 174 are between and connected to theconductive pads 173 a and 173 b, in accordance with some embodiments.

The wiring layers (not shown) are formed over the surface 172 b and areelectrically connected to the conductive pads 173 b and the conductivevia structures 174, in accordance with some embodiments. The wiringlayers (not shown) are further formed over the surface 172 a and areelectrically connected to the conductive pads 173 a and the conductivevia structures 174, in accordance with some embodiments. The conductivevia structures 174, the conductive pads 173 a and 173 b, and the wiringlayers are made of a conductive material, such as copper, aluminum, ortungsten, in accordance with some embodiments.

The insulating layer 175 is between the conductive via structures 174and the substrate 172, between the conductive pads 173 a and thesubstrate 172, and between the conductive pads 173 b and the substrate172, in accordance with some embodiments. The conductive pads 173 a and173 b and the conductive via structures 174 are electrically insulatedfrom the substrate 172 by the insulating layer 175, in accordance withsome embodiments.

The insulating layer 176 is formed over the surface 172 a, in accordancewith some embodiments. The insulating layer 176 has openings 176 arespectively exposing the conductive pads 173 a thereover, in accordancewith some embodiments. The insulating layer 178 is formed over thesurface 172 b, in accordance with some embodiments.

The insulating layer 178 has openings 178 a respectively exposing theconductive pads 173 b thereunder, in accordance with some embodiments.The recess R passes through the insulating layer 176 and extends intothe substrate 172, in accordance with some embodiments. The insulatinglayers 175, 176, and 178 are made of an insulating material, such asoxide (e.g., silicon oxide), in accordance with some embodiments.

The interposer substrate 170 may further include conductive layers 179.The conductive layers 179 are respectively formed over the conductivepads 173 b, in accordance with some embodiments. The conductive layers179 are made of a surface finish material (e.g., nickel, palladium,and/or gold) or a solder material, such as Sn and Ag or another suitableconductive material, in accordance with some embodiments.

In some other embodiments, as shown in FIG. 2, the substrate 172 is madeof an insulating material, and the insulating layer 175 is not formed.As shown in FIG. 2, the interposer substrate 170 further includes wiringlayers 201 formed in the substrate 172, in accordance with someembodiments.

The wiring layers 201 electrically connect the conductive pads 173 b(e.g., the conductive pads 173 b over the recess R) to the conductivevia structures 174, in accordance with some embodiments. The interposersubstrate 170 of FIG. 1E may be replaced by the interposer substrate 170of FIG. 2.

Referring back to FIG. 1E, the conductive structures 180 are formedbetween the conductive pads 173 a and 128 a, in accordance with someembodiments. The conductive structures 180 electrically connect theconductive pads 173 a to the conductive pads 128 a, in accordance withsome embodiments. The conductive structures 180 are conductive bumps orconductive pillars, in accordance with some embodiments. The conductivestructures 180 are made of a conductive material, such as a metalmaterial (e.g., copper) or a solder material (e.g., Sn and Ag), inaccordance with some embodiments.

As shown in FIG. 1F, a release film 190 is formed over the interposersubstrates 170 to cover the conductive layers 179 and the conductivepads 173 b, in accordance with some embodiments. The release film 190 isused to prevent the conductive layers 179 and the conductive pads 173 bfrom being covered by a molding layer formed in the subsequent process,in accordance with some embodiments. The release film 190 is made of apolymer material or another suitable material.

Thereafter, as shown in FIG. 1F, a molding layer 210 is formed betweenthe release film 190, the interposer substrates 170, the redistributionstructure 120, and the chips 140, in accordance with some embodiments.In some embodiments, a thermal process is performed on the molding layer210 to cure the molding layer 210. The molding layer 210 surrounds theinterposer substrates 170, the chips 140, the conductive bumps 150, theunderfill layer 160, the conductive structures 180, and the damstructures 130, in accordance with some embodiments. The molding layer210 is made of a polymer material or another suitable insulatingmaterial.

As shown in FIG. 1G, the release film 190 is removed, in accordance withsome embodiments. As shown in FIG. 1G, a trench 212 is formed in themolding layer 210, in accordance with some embodiments. The trench 212passes through the molding layer 210 between the interposer substrates170 and between the conductive structures 180 under different interposersubstrates 170, in accordance with some embodiments.

The trench 212 divides the molding layer 210 into portions 214, inaccordance with some embodiments. The portions 214 are spaced apart fromeach other, in accordance with some embodiments. Each of the portions214 surrounds one of the interposer substrates 170 and the chip 140under the one of the interposer substrates 170, in accordance with someembodiments. The trench 212 is formed using a cutting process, inaccordance with some embodiments.

As shown in FIG. 1H, the carrier substrate 110 is removed, in accordancewith some embodiments. As shown in FIG. 1H, the redistribution structure120 is flipped upside down, in accordance with some embodiments. Asshown in FIG. 1H, the redistribution structure 120 and the interposersubstrates 170 are disposed over a carrier substrate 220, in accordancewith some embodiments.

As shown in FIG. 1H, the insulating layer 121 is removed, in accordancewith some embodiments. In some other embodiments (not shown), theinsulating layer 121 is partially removed to expose the conductive pads122. As shown in FIG. 1H, conductive bumps 230 are respectively formedover the conductive pads 122, in accordance with some embodiments. Theconductive bumps 230 are made of a solder material, such as Sn and Ag oranother suitable conductive material, in accordance with someembodiments.

As shown in FIGS. 1H and 1I, a sawing process is performed on theredistribution structure 120 between the interposer substrates 170 tocut through the redistribution structure 120, in accordance with someembodiments. The redistribution structure 120 is cut into portions 129spaced apart from each other, in accordance with some embodiments.

After the sawing process, the carrier substrate 220 is removed, inaccordance with some embodiments. After the sawing process, chippackages 100 are substantially formed, in accordance with someembodiments. For the sake of simplicity, FIG. 1I only shows one of thechip packages 100, in accordance with some embodiments.

As shown in FIG. 1I, the chip package 100 has the portion 129 of theredistribution structure 120, the chip 140, the interposer substrate170, the portion 214 of the molding layer 210, and the conductive bumps150 and 230, in accordance with some embodiments. The interposersubstrate 170 has a thickness T1 ranging from about 50 μm to about 300μm, in accordance with some embodiments. The recess R has a depth D1ranging from about 20 μm to about 270 μm, in accordance with someembodiments.

As shown in FIG. 1J, a package structure 300 is bonded to the interposersubstrate 170 through conductive bumps 240, in accordance with someembodiments. The conductive bumps 240 are between the package structure300 and the interposer substrate 170, in accordance with someembodiments. The conductive layers 179 are merged into the conductivebumps 240, in accordance with some embodiments.

The package structure 300 is electrically connected to the wiring layer124 and 126 of the redistribution structure 120 through the conductivebumps 240, the interposer substrate 170, and the conductive structures180, in accordance with some embodiments. The package structure 300includes a memory device (e.g., a dynamic random access memory device),a passive device, a logic device, a radio frequency (RF) device, oranother suitable device.

The package structure 300 includes a redistribution structure 310, achip 320, conductive bumps 330, an underfill layer 340, and a moldinglayer 350, in accordance with some embodiments. The redistributionstructure 310 includes an insulating layer 312, conductive pads 314 and316, and wiring layers 318, in accordance with some embodiments. Theinsulating layer 312 may be a multilayer structure or a single layerstructure.

The wiring layers 318 and portions of the conductive pads 314 and 316are in the insulating layer 312, in accordance with some embodiments.The wiring layers 318 are electrically connected to the conductive pads314 and 316, in accordance with some embodiments. The insulating layer312 is made of an insulating material such as a polymer material (e.g.,polybenzoxazole, polyimide, or a photosensitive material), nitride(e.g., silicon nitride), oxide (e.g., silicon oxide), siliconoxynitride, or the like, in accordance with some embodiments. The wiringlayers 318 and the conductive pads 314 and 316 are made of a conductivematerial, such as metal (e.g. copper, aluminum, or tungsten), inaccordance with some embodiments.

The chip 320 is bonded to the redistribution structure 310 through theconductive bumps 330, in accordance with some embodiments. The chip 320has a substrate 322 and conductive pads 324, in accordance with someembodiments. The substrate 322 has a surface 322 a facing theredistribution structure 310, in accordance with some embodiments. Theconductive pads 324 are over the surface 322 a, in accordance with someembodiments.

In some embodiments, electronic elements (not shown) are formed on or inthe substrate 322. The electronic elements include active elements (e.g.transistors, diodes, or the like) and/or passive elements (e.g.resistors, capacitors, inductors, or the like). The conductive pads 324are electrically connected to the electronic elements, in accordancewith some embodiments.

In some embodiments, the substrate 322 is made of at least an elementarysemiconductor material including silicon or germanium in a singlecrystal, polycrystal, or amorphous structure. In some other embodiments,the substrate 322 is made of a compound semiconductor, such as siliconcarbide, gallium arsenide, gallium phosphide, indium phosphide, indiumarsenide, an alloy semiconductor, such as SiGe, or GaAsP, or acombination thereof.

The substrate 322 may also include multi-layer semiconductors,semiconductor on insulator (SOI) (such as silicon on insulator orgermanium on insulator), or a combination thereof. The conductive pads324 is made of a conductive material, such as metal (e.g., copper oraluminum), in accordance with some embodiments.

The conductive bumps 330 are between and electrically connected to theconductive pads 314 and 324, in accordance with some embodiments. Theconductive bumps 330 are made of a solder material, such as Sn and Ag oranother suitable conductive material, in accordance with someembodiments.

The underfill layer 340 is formed between the chip 320 and theredistribution structure 310, in accordance with some embodiments. Theunderfill layer 340 is made of an insulating material, such as a polymermaterial, in accordance with some embodiments. The molding layer 350 isformed over the redistribution structure 310 to cover the chip 320 andthe underfill layer 340, in accordance with some embodiments. Themolding layer 350 is made of a polymer material or another suitableinsulating material.

As shown in FIG. 1J, an underfill layer 360 is formed between theredistribution structure 310 and the interposer substrate 170 (or themolding layer 210), in accordance with some embodiments. The underfilllayer 360 surrounds the conductive bumps 240, in accordance with someembodiments. The underfill layer 360 is made of an insulating material,such as a polymer material, in accordance with some embodiments. In thisstep, a chip package C1 is substantially formed, in accordance with someembodiments.

The chip package C1 includes the chip packages 100 and 300, theconductive bumps 240, and the underfill layer 360, in accordance withsome embodiments. In the chip package C1, the chip 140 is partially orentirely positioned in the interposer substrate 170, in accordance withsome embodiments. Therefore, the total thickness T2 of the chip packageC1 is decreased, in accordance with some embodiments.

The rigidity of the interposer substrate 170 is greater than therigidity of the molding layer 210, in accordance with some embodiments.Therefore, the interposer substrate 170 may decrease the warpage of thechip package 100. As a result, the bonding yield between the chippackages 100 and 300 is improved, in accordance with some embodiments.In some embodiments, the interposer substrate 170 enhances the stiffnessand bending strength of the chip package 100.

The interposer substrate 170 is a rigid substrate, in accordance withsome embodiments. Therefore, the interposer substrate 170 (including theconductive pads 173 b) is substantially not affected by the stresscaused by thermal expansion mismatch between the molding layer 210 andthe chip 140, in accordance with some embodiments. As a result, thebonding yield between the conductive pads 173 b and the conductive bumps240 is improved, in accordance with some embodiments.

FIGS. 3A-3B are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments. After thestep of FIG. 1D is performed, as shown in FIG. 3A, an adhesive layer Ais formed over a top surface 142 b of the substrate 142 of the chip 140,in accordance with some embodiments. The adhesive layer A is a film, aglue layer, or a paste layer, in accordance with some embodiments.

The adhesive layer A is made of a polymer material or a high thermalconductivity material, in accordance with some embodiments. The highthermal conductivity material has a thermal conductivity (k) greaterthan about 1 Wm⁻¹K⁻¹, in accordance with some embodiments. The highthermal conductivity material includes Al₂O₃ and/or graphene, inaccordance with some embodiments. The adhesive layer A is formed using acoating process, a lamination process, or a deposition process, inaccordance with some embodiments.

As shown in FIG. 3B, the steps of FIGS. 1E-1J are performed, inaccordance with some embodiments. As shown in FIG. 3B, a chip package C3is formed, in accordance with some embodiments. The chip package C3 issimilar to the chip package C1 of FIG. 1J, except that the chip packageC3 further has the adhesive layer A, in accordance with someembodiments. The adhesive layer A is in direct contact with theinterposer substrate 170 (or the substrate 172) and the chip 140, inaccordance with some embodiments.

The adhesive layer A is used to bond the interposer substrate 170 to thechip 140, in accordance with some embodiments. The adhesive layer A isused to dissipate the heat generated from the chip 140 to the interposersubstrate 170, in accordance with some embodiments.

FIG. 4 is a cross-sectional view of a chip package C4, in accordancewith some embodiments. As shown in FIG. 4, the chip package C4 issimilar to the chip package C1 of FIG. 1J, except that the recess R ofthe chip package C4 does not pass through the insulating layer 176, inaccordance with some embodiments. Therefore, the recess R does notextend into the substrate 172, in accordance with some embodiments.

The interposer 170 has wiring layers 410 and 420 and conductive pads 430and 440, in accordance with some embodiments. The wiring layers 410 arein the insulating layer 176 and connected to the conductive pads 430, inaccordance with some embodiments. The insulating layer 176 coversportions of the conductive pads 430, in accordance with someembodiments. The wiring layers 410, the conductive pads 430, and theinsulating layer 176 together form a wiring structure WR1, in accordancewith some embodiments.

The recess R does not pass through the wiring structure WR1, inaccordance with some embodiments. The conductive structures 180 areconnected to the conductive pads 430, in accordance with someembodiments. The wiring layers 420 are in the insulating layer 178 andconnected to the conductive pads 440, in accordance with someembodiments. The insulating layer 178 covers portions of the conductivepads 440, in accordance with some embodiments. The wiring layers 420,the conductive pads 440, and the insulating layer 178 together form awiring structure WR2, in accordance with some embodiments.

The conductive bumps 240 are connected to the conductive pads 440, inaccordance with some embodiments. The conductive pads 440 and the wiringlayers 420 are electrically connected to the conductive pads 430 and thewiring layers 410 through the conductive via structures 174, inaccordance with some embodiments. The interposers 170 of FIGS. 1E-1J and3B may include the wiring structures WR1 and WR2 according torequirements.

FIG. 5 is a cross-sectional view of a chip package C5, in accordancewith some embodiments. As shown in FIG. 5, the chip package C5 issimilar to the chip package C4 of FIG. 4, except that the recess R ofthe chip package C5 passes through the wiring structure WR1 and thesubstrate 172, in accordance with some embodiments. The wiring structureWR2 further has a conductive layer 510 in the insulating layer 178, inaccordance with some embodiments. The recess R exposes the conductivelayer 510, in accordance with some embodiments.

The conductive layer 510 is over the chip 140, in accordance with someembodiments. In some embodiments, a size (e.g., a width W1 or an area)of the conductive layer 510 is greater than a size (e.g., a width W2 oran area) of the chip 140. The conductive layer 510 has a thickness T3ranging from about 5 μm to about 50 μm, in accordance with someembodiments. The wiring layer 420 has a thickness T4 ranging from about5 μm to about 40 μm, in accordance with some embodiments.

The conductive layer 510 is used to dissipate the heat generated fromthe chip 140, in accordance with some embodiments. The molding layer 210is in direct contact with the conductive layer 510 and the chip 140, inaccordance with some embodiments. The conductive layer 510, theconductive via structures 174, the wiring layers 420, and the conductivepads 440 are made of the same material, in accordance with someembodiments. The conductive layer 510 is made of a conductive material,such as metal (e.g. copper, aluminum, or tungsten), in accordance withsome embodiments.

FIG. 6 is a cross-sectional view of a chip package C6, in accordancewith some embodiments. As shown in FIG. 6, the chip package C6 issimilar to the chip package C4 of FIG. 4, except that the recess R ofthe chip package C6 does not extend into the substrate 172, inaccordance with some embodiments. The recess R is only in the wiringstructure WR1, in accordance with some embodiments.

FIGS. 7A-7B are cross-sectional views of various stages of a process forforming a chip package, in accordance with some embodiments. After thestep of FIG. 1E is performed, as shown in FIG. 7A, an underfill layer710 is formed between the interposer substrates 170 and theredistribution structure 120 and between the interposer substrates 170and the chips 140 thereunder, in accordance with some embodiments. Theunderfill layer 710 is made of an insulating material, such as a polymermaterial or a molding compound material consisting of epoxy, fillers,resin, or combinations thereof, in accordance with some embodiments. Insome other embodiments, the underfill layers 160 are not formed, and theunderfill layer 710 is filled into gaps between the chips 140 and theredistribution structure 120.

As shown in FIG. 7B, the steps of FIGS. 1G-1J are performed, inaccordance with some embodiments. As shown in FIG. 7B, chip packages C7are substantially formed, in accordance with some embodiments. For thesake of simplicity, FIG. 7B only shows one of the chip packages C7, inaccordance with some embodiments. The underfill layer 710 surrounds thechip 140, the underfill layer 160, the dam structure 130, the conductivestructures 180, and a lower portion of the interposer substrate 170, inaccordance with some embodiments.

The underfill layer 710 is in direct contact with the chip 140, theunderfill layer 160, the dam structure 130, the conductive structures180, the interposer substrate 170, and the redistribution structure 120,in accordance with some embodiments. The underfill layer 710 coversportion of sidewalls 170 s of the interposer substrate 170, inaccordance with some embodiments.

The width W170 of the interposer substrate 170 is less than the widthW120 of the redistribution structure 120, in accordance with someembodiments. The underfill layer 710 has an inclined sidewall 712, inaccordance with some embodiments. The inclined sidewall 712 surroundsthe interposer substrate 170, in accordance with some embodiments.

FIG. 8A is a cross-sectional view of a chip package C8, in accordancewith some embodiments. FIG. 8B is a top view of the interposer substrate170 of the chip package C8 of FIG. 8A, in accordance with someembodiments. As shown in FIGS. 8A and 8B, the chip package C8 is similarto the chip package C7 of FIG. 7B, except that the insulating layer 178of the interposer substrate 170 exposes a portion of the surface 172 bof the substrate 172 of the interposer substrate 170, in accordance withsome embodiments.

The interposer substrate 170 has a central region 170 c and a peripheralregion 170 r surrounding the central region 170 c, in accordance withsome embodiments. The exposed portion of the surface 172 b is in theperipheral region 170 r, in accordance with some embodiments. Theexposed portion of the surface 172 b continuously surrounds the entireinsulating layer 178, in accordance with some embodiments.

The interposer substrate 170 has an edge recess R1, in accordance withsome embodiments. The edge recess R1 is surrounded by a sidewall 178 bof the insulating layer 178 and the exposed portion of the surface 172b, in accordance with some embodiments. The edge recess R1 has a widthW3 ranging from about 20 μm to about 150 μm, in accordance with someembodiments.

If, before bonding the package structure 300 to the interposer substrate170, the underfill layer 710 extends along the sidewall 170 s (of theinterposer substrate 170) onto the surface 172 b of the substrate 172,the recess R1 may accommodate the underfill layer 710 on the surface 172b to prevent the underfill layer 710 from further extending onto theconductive pads 173 b and hindering bonding between the conductive pads173 b and the conductive bumps 240.

The underfill layer 360 between the package structure 300 and theinterposer substrate 170 fills the recess R1, in accordance with someembodiments. That is, a portion 362 of the underfill layer 360 extendsinto the interposer substrate 170, in accordance with some embodiments.The portion 362 has a ring shape, in accordance with some embodiments.The portion 362 continuously surrounds the entire insulating layer 178,in accordance with some embodiments. In some other embodiments, theunderfill layer 360 is not formed.

FIG. 9A is a cross-sectional view of a chip package C9, in accordancewith some embodiments. FIG. 9B is a top view of the interposer substrate170 of the chip package C9 of FIG. 9A, in accordance with someembodiments. As shown in FIGS. 9A and 9B, the chip package C9 is similarto the chip package C7 of FIG. 7B, except that the insulating layer 178of the interposer substrate 170 has a trench 178 c, in accordance withsome embodiments.

The trench 178 c exposes the surface 172 b of the substrate 172 in theperipheral region 170 r, in accordance with some embodiments. The trench178 c surrounds all of the conductive pads 173 b, in accordance withsome embodiments. The trench 178 c has a width W4 ranging from about 20μm to about 150 μm, in accordance with some embodiments.

The trench 178 c is used to accommodate the underfill layer 710extending onto the surface 172 b to prevent the underfill layer 710 fromfurther extending onto the conductive pads 173 b and hindering bondingbetween the conductive pads 173 b and the conductive bumps 240.

The underfill layer 360 between the package structure 300 and theinterposer substrate 170 fills the trench 178 c, in accordance with someembodiments. That is, a portion 364 of the underfill layer 360 extendsinto the interposer substrate 170, in accordance with some embodiments.The portion 364 has a ring shape, in accordance with some embodiments.The portion 364 continuously surrounds all of the conductive pads 173 b,in accordance with some embodiments.

FIG. 10A is a cross-sectional view of a chip package C10, in accordancewith some embodiments. FIG. 10B is a top view of the interposersubstrate 170 of the chip package C10 of FIG. 10A, in accordance withsome embodiments. As shown in FIGS. 10A and 10B, the chip package C10 issimilar to the chip package C7 of FIG. 7B, except that the insulatinglayer 178 of the interposer substrate 170 has a protruding portion 178d, in accordance with some embodiments. The protruding portion 178 dprotrudes from an upper surface 178 e of the insulating layer 178, inaccordance with some embodiments.

The protruding portion 178 d continuously surrounds all of theconductive pads 173 b, in accordance with some embodiments. Theprotruding portion 178 d has a ring shape, in accordance with someembodiments. The protruding portion 178 d extends into the underfilllayer 360 between the package structure 300 and the interposer substrate170, in accordance with some embodiments.

The protruding portion 178 d has a width W5 ranging from about 20 μm toabout 150 μm, in accordance with some embodiments. The protrudingportion 178 d has a thickness T ranging from about 10 μm to about 80 μm,in accordance with some embodiments. The protruding portion 178 d isused to prevent the underfill layer 710 from extending onto theconductive pads 173 b and hindering bonding between the conductive pads173 b and the conductive bumps 240, in accordance with some embodiments.

FIG. 11 is a cross-sectional view of a chip package C11, in accordancewith some embodiments. As shown in FIG. 11, the chip package C11 issimilar to the chip package C7 of FIG. 7B, except that the width W6 ofthe interposer substrate 170 is substantially equal to or greater thanthe width W7 of the redistribution structure 120, in accordance withsome embodiments.

The underfill layer 710 is formed between the interposer substrate 170and the redistribution structure 120, in accordance with someembodiments. The underfill layer 710 does not extend onto the sidewall170 s of the interposer substrate 170, in accordance with someembodiments. The underfill layer 710 has an inclined sidewall 712, inaccordance with some embodiments. The inclined sidewall 712 is betweenthe interposer substrate 170 and the redistribution structure 120, inaccordance with some embodiments.

FIG. 12 is a cross-sectional view of a chip package C12, in accordancewith some embodiments. As shown in FIG. 12, the chip package C12 issimilar to the chip package C1 of FIG. 1J, except that the interposersubstrate 170 of the chip package C12 further has conductive viastructures 1210, in accordance with some embodiments.

The conductive via structures 1210 pass through the insulating layer176, in accordance with some embodiments. The conductive via structures1210 are connected to the conductive pads 173 a thereover and theconductive structures 180 thereunder, in accordance with someembodiments. The conductive via structures 1210 are in direct contactwith the conductive structures 180 thereunder, in accordance with someembodiments.

The total thickness T5 of the substrate 172 and the insulating layer 178ranges from about 20 μm to about 100 μm, in accordance with someembodiments. The thickness T6 of the insulating layer 176 ranges fromabout 30 μm to about 200 μm, in accordance with some embodiments. Thetotal thickness T7 of the interposer substrate 170 ranges from about 50μm to about 300 μm, in accordance with some embodiments. The recess Rhas a depth D1 ranging from about 30 μm to about 200 μm, in accordancewith some embodiments.

The insulating layers 176 and 178 are made of different materials, inaccordance with some embodiments. The insulating layer 176 is made of apolymer material, in accordance with some embodiments. The insulatinglayer 176 includes an Ajinomoto build-up film (ABF), in accordance withsome embodiments. The insulating layer 178 is made of a polymermaterial, such as a solder resist material (e.g., polyimide), inaccordance with some embodiments. The substrate 172 is made of aninsulating material, such as a polymer material, in accordance with someembodiments.

FIG. 13 is a cross-sectional view of a chip package C13, in accordancewith some embodiments. As shown in FIG. 13, the chip package C13 issimilar to the chip package C1 of FIG. 1J, except that the interposersubstrate 170 of the chip package C13 further has a substrate 1310,conductive via structures 1320, and solder layers 1330, in accordancewith some embodiments. The recess R passes through the substrate 1310,in accordance with some embodiments. The substrate 1310 is made of apolymer material, a fiber material, a semiconductor material, a glassmaterial, a metal material, or another suitable material.

The conductive via structures 1320 pass through the substrate 1310, inaccordance with some embodiments. The conductive via structures 1320 areconnected to the conductive structures 180 thereunder, in accordancewith some embodiments. The substrate 1310 and the conductive viastructures 1320 surround the chip 140, in accordance with someembodiments. The conductive via structures 1320 are made of a conductivematerial, such as copper, aluminum, or tungsten, in accordance with someembodiments.

The solder layers 1330 are between and connected to the conductive viastructures 1320 and the conductive pads 173 a, in accordance with someembodiments. The solder layers 1330 are made of a solder material, suchas Sn and Ag or another suitable conductive material, in accordance withsome embodiments.

FIGS. 14A-14D are cross-sectional views of various stages of a processfor forming a chip package, in accordance with some embodiments. Afterthe step of FIG. 1E is performed, as shown in FIG. 14A, a trench 1410 isformed in the redistribution structure 120, in accordance with someembodiments. The trench 1410 passes through the redistribution structure120 between the interposer substrates 170 and between the conductivestructures 180 under different interposer substrates 170, in accordancewith some embodiments.

The trench 1410 divides the redistribution structure 120 into portions129, in accordance with some embodiments. The portions 129 are spacedapart from each other, in accordance with some embodiments. Each of theportions 129 is under one of the interposer substrates 170, inaccordance with some embodiments. The trench 1410 is formed using asawing process, in accordance with some embodiments.

As shown in FIG. 14A, a release film 190 is formed over the interposersubstrates 170 to cover the conductive layers 179 and the conductive viastructures 174, in accordance with some embodiments. Thereafter, asshown in FIG. 14A, a molding layer 210 is formed between the releasefilm 190, the interposer substrates 170, the portions 129, and the chips140, in accordance with some embodiments. The molding layer 210surrounds the interposer substrates 170, the chips 140, the conductivebumps 150, the underfill layer 160, the dam structures 130, and theportions 129, in accordance with some embodiments.

As shown in FIG. 14B, the release film 190 is removed, in accordancewith some embodiments. As shown in FIG. 14B, a trench 212 is formed inthe molding layer 210, in accordance with some embodiments. The trench212 passes through the molding layer 210 between the interposersubstrates 170 and between the conductive structures 180 under differentinterposer substrates 170, in accordance with some embodiments.

The trench 212 divides the molding layer 210 into portions 214, inaccordance with some embodiments. The portions 214 are spaced apart fromeach other, in accordance with some embodiments. Each of the portions214 surrounds one of the interposer substrates 170 and the chip 140 andthe portion 129 under the one of the interposer substrates 170, inaccordance with some embodiments. The trench 212 is formed using acutting process, in accordance with some embodiments.

As shown in FIG. 14C, the carrier substrate 110 is removed, inaccordance with some embodiments. As shown in FIG. 14C, the interposersubstrates 170 are flipped upside down, in accordance with someembodiments. As shown in FIG. 14C, the interposer substrates 170 aredisposed over a carrier substrate 220, in accordance with someembodiments. As shown in FIG. 14C, the insulating layers 121 of theportions 129 are removed, in accordance with some embodiments.

In some embodiments, the portions 214 of the molding layer 210 adjacentto the insulating layers 121 are removed during removing the insulatinglayers 121. In some other embodiments (not shown), the portions 214 ofthe molding layer 210 adjacent to the insulating layers 121 are remainedafter removing the insulating layers 121. As shown in FIG. 14C,conductive bumps 230 are respectively formed over the conductive pads122, in accordance with some embodiments. At this step, chip packages100 are substantially formed, in accordance with some embodiments.

As shown in FIG. 14D, the carrier substrate 220 is removed, inaccordance with some embodiments. As shown in FIG. 14D, the step of FIG.1J is performed to form chip packages C14, in accordance with someembodiments. For the sake of simplicity, FIG. 14D only shows one of thechip packages C14, in accordance with some embodiments. In the chippackage C14, the molding layer 210 surrounds the redistributionstructure 120, in accordance with some embodiments.

FIG. 15 is a cross-sectional view of a chip package C15, in accordancewith some embodiments. As shown in FIG. 15, the chip package C15 issimilar to the chip package C1 of FIG. 1J, except that a top portion ofthe dam structure 130 of the chip package C15 extends into the recess Rof the interposer substrate 170, in accordance with some embodiments.

The interposers 170 of FIGS. 7A-14D may have the wiring structures WR1and WR2 of FIG. 4, 5 or 6. The interposers 170 of FIGS. 7A-14D may bereplaced by the interposers 170 of FIGS. 2 and 4-6.

In accordance with some embodiments, chip packages and methods forforming the same are provided. The methods (for forming the chippackage) bond an interposer substrate to a redistribution structure, anda chip is between the interposer substrate and the redistributionstructure and is partially in the interposer substrate. The interposersubstrate may decrease the warpage of a chip package (including theinterposer substrate, the redistribution structure, and the chip). As aresult, the bonding yield between the chip package and a packagestructure is improved. The interposer substrate increases stiffness andmechanical strength of the chip package. The wiring layers and theconductive pads of the interposer substrate are substantially notaffected by the stress caused by thermal expansion mismatch between themolding layer and the chip of the chip package. Since the chip ispartially in the interposer substrate, the total thickness of the chippackage is decreased.

In accordance with some embodiments, a method for forming a chip packageis provided. The method includes disposing a chip over a redistributionstructure. The redistribution structure includes a first insulatinglayer and a first wiring layer, and the first wiring layer is in thefirst insulating layer and electrically connected to the chip. Themethod includes bonding an interposer substrate to the redistributionstructure through a conductive structure. The chip is between theinterposer substrate and the redistribution structure. The interposersubstrate has a recess adjacent to the redistribution structure. A firstportion of the chip is in the recess. The interposer substrate includesa substrate and a conductive via structure, and the conductive viastructure passes through the substrate and is electrically connected tothe first wiring layer through the conductive structure.

In accordance with some embodiments, a method for forming a chip packageis provided. The method includes disposing a chip over a redistributionstructure. The redistribution structure includes an insulating layer anda wiring layer, and the wiring layer is in the insulating layer andelectrically connected to the chip. The method includes bonding aninterposer substrate to the redistribution structure through a firstconductive bump. The chip is between the interposer substrate and theredistribution structure. The interposer substrate has a recess adjacentto the redistribution structure, and a portion of the chip is in therecess. The method includes forming a molding layer between theinterposer substrate and the redistribution structure and between theinterposer substrate and the chip and surrounding the interposersubstrate and the first conductive bump.

In accordance with some embodiments, a chip package is provided. Thechip package includes a redistribution structure comprising aninsulating layer and a wiring layer. The wiring layer is in theinsulating layer. The chip package includes a chip over theredistribution structure and electrically connected to the wiring layer.The chip package includes an interposer substrate over theredistribution structure and the chip. A portion of the chip is in theinterposer substrate. The chip package includes a conductive structurebetween the interposer substrate and the redistribution structure andelectrically connected to the wiring layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming a chip package, comprising:disposing a chip over a redistribution structure, wherein theredistribution structure comprises a first insulating layer and a firstwiring layer, and the first wiring layer is in the first insulatinglayer and electrically connected to the chip; and after disposing thechip over the redistribution structure, bonding an interposer substrateto the redistribution structure through a conductive structure, whereinthe chip is between the interposer substrate and the redistributionstructure, the interposer substrate has a recess adjacent to theredistribution structure, a first portion of the chip is in the recess,the interposer substrate comprises a substrate and a conductive viastructure, the conductive via structure passes through the substrate andis electrically connected to the first wiring layer through theconductive structure, the conductive structure comprises a conductivebump or a conductive pillar, the interposer substrate further comprisesa first wiring structure, the substrate has a first surface facing theredistribution structure, the first wiring structure is over the firstsurface, the first wiring structure comprises a second insulating layerand a second wiring layer in the second insulating layer, and the recessis in the first wiring structure.
 2. The method for forming the chippackage as claimed in claim 1, further comprising: forming an underfilllayer between the interposer substrate and the redistribution structureand between the interposer substrate and the chip after bonding theinterposer substrate to the redistribution structure.
 3. The method forforming the chip package as claimed in claim 1, further comprising:forming a dam structure over the redistribution structure before bondingthe interposer substrate to the redistribution structure, wherein thedam structure has an opening, and the chip is over or in the opening. 4.The method for forming the chip package as claimed in claim 1, furthercomprising: bonding a package structure to the interposer substrateafter bonding the interposer substrate to the redistribution structure.5. The method for forming the chip package as claimed in claim 1,wherein the recess passes through the first wiring structure.
 6. Themethod for forming the chip package as claimed in claim 5, wherein therecess extends into the substrate.
 7. The method for forming the chippackage as claimed in claim 6, wherein the substrate has a secondsurface facing away from the redistribution structure, the interposersubstrate further comprises a second wiring structure over the secondsurface and the recess, the second wiring structure comprises a thirdinsulating layer and a conductive layer in the third insulating layer,and the recess further passes through the substrate and exposes theconductive layer.
 8. The method for forming the chip package as claimedin claim 1, wherein the substrate is made of a fiber material, a polymermaterial, a semiconductor material, a glass material, or a metalmaterial.
 9. A method for forming a chip package, comprising: disposinga chip over a redistribution structure, wherein the redistributionstructure comprises an insulating layer and a first wiring layer, andthe first wiring layer is in the insulating layer and electricallyconnected to the chip; bonding an interposer substrate to theredistribution structure through a first conductive bump, wherein thechip is between the interposer substrate and the redistributionstructure, the interposer substrate has a recess adjacent to theredistribution structure, and a portion of the chip is in the recess;and forming a molding layer surrounding the interposer substrate and thefirst conductive bump, wherein the molding layer is partially betweenthe interposer substrate and the redistribution structure and ispartially between the interposer substrate and the chip.
 10. The methodfor forming the chip package as claimed in claim 9, further comprising:forming the redistribution structure over a carrier substrate beforedisposing the chip over the redistribution structure; and removing thecarrier substrate after forming the molding layer.
 11. The method forforming the chip package as claimed in claim 9, further comprising:forming a dam structure over the redistribution structure beforedisposing the chip over the redistribution structure, wherein the damstructure has an opening, the disposing of the chip over theredistribution structure comprises bonding the chip to theredistribution structure through a second conductive bump, and thesecond conductive bump is in the opening.
 12. The method for forming thechip package as claimed in claim 11, wherein a top portion of the damstructure is in the recess.
 13. The method for forming the chip packageas claimed in claim 9, wherein the interposer substrate comprises asubstrate, a conductive via structure, and a second wiring layer, theconductive via structure passes through the substrate and iselectrically connected to the first wiring layer through the firstconductive bump, the second wiring layer is in or over the substrate,and the substrate separates the second wiring layer from the moldinglayer and the chip.
 14. The method for forming the chip package asclaimed in claim 9, further comprising: forming an adhesive layer over atop surface of the chip before bonding the interposer substrate to theredistribution structure, wherein the adhesive layer is between the chipand the interposer substrate.
 15. The method for forming the chippackage as claimed in claim 9, wherein the interposer substratecomprises a substrate and a wiring structure, the substrate has asurface facing away from the redistribution structure, the wiringstructure is over the surface, the wiring structure comprises aninsulating layer and a conductive layer in the insulating layer, and therecess passes through the substrate and exposes the conductive layer.16. The method for forming the chip package as claimed in claim 15,wherein the conductive layer is wider than the chip.
 17. A method forforming a chip package, comprising: forming a dam structure over aredistribution structure; bonding a chip to the redistribution structurethrough a first conductive bump, wherein the dam structure continuouslysurrounds the chip and the first conductive bump; and after bonding thechip to the redistribution structure through the first conductive bump,bonding an interposer substrate to the redistribution structure througha conductive structure, wherein the chip is between the interposersubstrate and the redistribution structure, a portion of the chip is inthe interposer substrate, the dam structure is between the firstconductive bump and the conductive structure and is between theinterposer substrate and the redistribution structure, and theconductive structure comprises a second conductive bump or a conductivepillar, after bonding the interposer substrate to the redistributionstructure, forming a molding layer surrounding the interposer substrate,the conductive structure, the chip, and the first conductive bump,wherein the molding layer is partially between the interposer substrateand the redistribution structure and is partially between the interposersubstrate and the chip.
 18. The method for forming the chip package asclaimed in claim 17, wherein the molding layer is partially between theinterposer substrate and the dam structure.
 19. The method for formingthe chip package as claimed in claim 17, wherein the molding layer is indirect contact with the dam structure, the redistribution structure, thechip, the interposer substrate, and the conductive structure.
 20. Themethod for forming the chip package as claimed in claim 17, furthercomprising: forming an adhesive layer over a top surface of the chipbefore bonding the interposer substrate to the redistribution structure,wherein the adhesive layer is in direct contact with the chip and theinterposer substrate.